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Data Sheet, July 2009
Control integrated Power System (CIPOSTM)
IKCS22F60F2A IKCS22F60F2C
http://www.infineon.com/cipos
Power Management & Drives
Never
stop
thinking.
CIPOSTM IKCS22F60F2A IKCS22F60F2C
Revision History: Previous Version: Page 4 10 11
2009-07 2 Subjects (major changes since last revision) Added UL certification Change VIT,HYS Revised energy units
Rev.2.1
Authors: W. Frank, H. Rettinger Edition 2008-09 Published by Infineon Technologies AG 85579 Neubiberg, Germany (c) Infineon Technologies AG 7/28/09. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office or representatives (http://www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office or representatives. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. TRENCHSTOP is a registered trademark of Infineon Technologies AG. CIPOSTM, CoolMOSTM, CoolSETTM, DuoPackTM and thinQ!TM are trademarks of Infineon Technologies AG.
(R)
Data Sheet
2/18
Rev. 2.1, July 2009
CIPOSTM IKCS22F60F2A IKCS22F60F2C Table of Contents
CIPOSTM Control integrated Power System ..................................................................................................4 Features........................................................................................................................................................4 Target Applications .....................................................................................................................................4 Description ...................................................................................................................................................4 System Configuration .................................................................................................................................4 Internal Electrical Schematic...........................................................................................................................5 Pin Assignment.................................................................................................................................................6 Pin Description ............................................................................................................................................6 /HIN1,2,3 and /LIN1,2,3 (Low side and high side control pins, Pin 15 - 20) ................................................6 /FLT-TEMP (temperature NTC, Pin 24) ......................................................................................................7 ITRIP (Over-current detection function, Pin 21) ..........................................................................................7 VDD, VSS (control side supply and reference, Pin 22, 23) .........................................................................7 VB1,2,3 and VS1,2,3 (High side supplies, Pin 1, 2, 4, 5, 7, 8) ....................................................................7 VRU, VRV, VRW (low side emitter, Pin 12, 13, 14) ....................................................................................7 V+ (positive bus input voltage, Pin 10) ........................................................................................................7 Absolute Maximum Ratings.............................................................................................................................8 Module Section ............................................................................................................................................8 IGBT and Diode Section..............................................................................................................................8 Control Section ............................................................................................................................................9 Recommended Operation Conditions ............................................................................................................9 Static Parameters............................................................................................................................................10 Dynamic Parameters ......................................................................................................................................12 Integrated Components .................................................................................................................................13 Typical Application .........................................................................................................................................13 Characteristics ................................................................................................................................................14 Test Circuits and Parameter Definition ........................................................................................................16 Package Outline IKCS22F60F2A ...................................................................................................................18 Package Outline IKCS22F60F2C ...................................................................................................................19
Data Sheet
3/18
Rev. 2.1, July 2009
CIPOSTM IKCS22F60F2A IKCS22F60F2C
CIPOSTM Control integrated Power System
Single In-Line Intelligent Power Module 3-bridge 600V / 22A @ 25C
Features
* DCB isolated Single In-Line molded module * FAULT signal * TrenchStop IGBTs with lowest VCE(sat) * Optimal adapted antiparallel diode for low EMI * Integrated bootstrap diode and capacitor * Rugged SOI gate driver technology with stability against transient and negative voltage * Fully compliant to 3.3V and 5V microcontrollers * Temperature sense * Undervoltage lockout at all channels * Matched propagation delay for all channels * Low side emitter pins accessible for all phase current monitoring (open emitter) * Cross-conduction prevention * Lead-free terminal plating; RoHS compliant * Qualified applications according to JEDEC
1 (R)
Description
The CIPOSTM module family offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs. This SIL-IPM is designed to control AC motors in variable speed drives for applications like air conditioning, compressors and washing machines. The package concept is specially adapted to power applications, which need extremely good thermal conduction and electrical isolation, but also EMI-save control and overload protection. (R) The features of Infineon TrenchStop IGBTs and antiparallel diodes are combined with a new optimized Infineon SOI gate driver for excellent electrical performance. The product provides a FAULT signal, which is significantly simplifying the system.
System Configuration
* 3 halfbridges with TrenchStop diodes * 3 SOI gate driver * Bootstrap diodes for high side supply * Integrated 100nF bootstrap capacitance * Temperature sensor, passive components for adaptions * Isolated heatsink * Creepage distance typ. 3.2mm
(R)
(high
IGBT & FW-
temperature stress tests for 1000h) for target
Target Applications
* Washing machines * Consumer Fans and Consumer Compressors
Certification
UL 1577 (UL file E314539)
1
J-STD-020 and JESD-022 4/18 Rev. 2.1, July 2009
Data Sheet
CIPOSTM IKCS22F60F2A IKCS22F60F2C
Internal Electrical Schematic
V+ (10)
Tr1, U-HS D1 Cge = 390 pF Cge1 Tr3, V-HS D3 Cge3 Tr5, W-HS D5 Cge5
Tr2, U-LS D2 Cge2
Tr4, V-LS D4 Cge4
Tr6, W-LS D6 Cge6
VRU (12) VRV (13) VRW (14) U, VS1 (8) V, VS2 (5) W, VS3 (2)
RH1 RL1 RH2 RL2 RH3 RL3
VB3 (1) VB2 (4) VB1 (7)
CbsH1 Dbs1Dbs3 CbsH2 CbsH3
Rbs
VDD (22) /HIN1 (15) /HIN2 (16) /HIN3 (17) /LIN1 (18) /LIN2 (19) /LIN3 (20) ITRIP (21) /FLTTEMP (24) VSS (23)
C1 Dz
VCC /HIN1 /HIN2 /HIN3 /LIN1 /LIN2 /LIN3 R2-R8 R1 RTS C2
Driver-IC
Figure 1: Internal Schematic
Data Sheet
5/18
Rev. 2.1, July 2009
CIPOSTM IKCS22F60F2A IKCS22F60F2C Pin Assignment
Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Pin Name VB3 W,VS3 n.a. VB2 V,VS2 n.a. VB1 U,VS1 n.a. V+ n.a. VRU VRV VRW /HIN1 /HIN2 /HIN3 /LIN1 /LIN2 /LIN3 ITRIP VDD VSS /FLT-TEMP Pin Description high side floating IC supply voltage motor output W, high side floating IC supply offset voltage None high side floating IC supply voltage motor output V, high side floating IC supply offset voltage None high side floating IC supply voltage motor output U, high side floating IC supply offset voltage None positive bus input voltage None low side emitter low side emitter low side emitter input gate driver high side 1/U input gate driver high side 2/V input gate driver high side 3/W input gate driver low side 1/U input gate driver low side 2/V input gate driver low side 3/W input overcurrent shutdown module control supply module negative supply Fault indication and temperature monitoring
Pin Description
/HIN1,2,3 and /LIN1,2,3 (Low side and high side control pins, Pin 15 - 20) These pins are active low and they are responsible for the control of the integrated IGBT The Schmitt-trigger input threshold of them are such to guarantee LSTTL and CMOS compatibility
down to 3.3V controller outputs. The maximum voltage at these pins is 6V and therefore fully compliant to 3.3V-microcontrollers. Pull-up resistor of about 75 k is internally provided to pre-bias inputs during supply start-up and a zener clamp is provided for pin protection purposes. Input schmitt-trigger and noise filter provide beneficial noise rejection to short input pulses. It is recommended for proper work of CIPOSTM not to provide an input pulse-width and PWM deadtimes lower than 1us. The integrated gate drive provides additionally a shoot through prevention capability which avoids the simultaneous on-state of two gate drivers of the same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and LO3).
Figure 2: Input pin structure Data Sheet 6/18
Rev. 2.1, July 2009
CIPOSTM IKCS22F60F2A IKCS22F60F2C
A minimum dead time insertion of typ 380ns is also provided, in order to reduce cross-conduction of the external power switches. /FLT-TEMP (temperature NTC, Pin 24) The TEMP terminal provides direct access to the NTC, which is referenced to VSS. An external pullup resistor connected to +5V ensures, that the resulting voltage can be directly connected to the microcontroller. VDDUV- = 10.4 V. This prevents the external power switches from critically low gate voltage levels during on-state and therefore from excessive power dissipation. VB1,2,3 and VS1,2,3 (High side supplies, Pin 1, 2, 4, 5, 7, 8) VB to VS is the high side supply voltage. The high side circuit can float with respect to VSS following the external high side power device emitter/source voltage. Due to the low power consumption, the floating driver stage is supplied by an integrated bootstrap circuit connected to VDD. This includes also integrated bootstrap capacitors of 100 nF at each floating supply, which are located very close to the
Figure 3: Internal Circuit at pin TEMP The same pin indicates a module failure in case of under voltage at pin VDD or in case of triggered over current detection at ITRIP. A pull-up resistor is externally required to bias the NTC. No temperature information is available during fault. ITRIP (Over-current detection function, Pin 21) CIPOSTM provides an over-current detection function by connecting the ITRIP input with the motor current feedback. The ITRIP comparator threshold (typ 0.46V) is referenced to VSS ground. A input noise filter (typ: tITRIPMIN = 220ns) prevents the driver to detect false over-current events. Over-current detection generates a hard shut down of all outputs of the gate driver after the shutdown propagation delay of typically 900ns. The fault-clear time is set to typically to 4.7ms. VDD, VSS (control side supply and reference, Pin 22, 23) VDD is the low side supply and it provides power both to input logic and to low side output power stage. Input logic is referenced to VSS ground as well as the under-voltage detection circuit. The under-voltage circuit enables the device to operate at power on when a supply voltage of at least a typical voltage of VDDUV+ = 12.1 V is at least present. The IC shuts down all the gate drivers power outputs, when the VCC supply voltage is below Figure 4: Input filter timing diagram gate drive circuit. The under-voltage detection operates with a rising supply threshold of typical VBSUV+ = 12.1 V and a falling threshold of VDDUV- = 10.4 V according to Figure 4. VS1,2,3 provide a high robustness against negative voltage in respect of VSS of -50 V. This ensures very stable designs even under rough conditions. VRU, VRV, VRW (low side emitter, Pin 12, 13, 14) The low side emitters are available for current measurements of each phase leg. It is recommended to keep the connection to pin VSS as short as possible in order to avoid unnecessary inductive voltage drops. V+ (positive bus input voltage, Pin 10) The high side IGBT are connected to the bus voltage. It is recommended, that the bus voltage does not exceed 500 V.
Data Sheet
7/18
Rev. 2.1, July 2009
CIPOSTM IKCS22F60F2A IKCS22F60F2C
Absolute Maximum Ratings
(Tc = 25C, if not stated otherwise) Module Section Description Condition Symbol Min Storage temperature range Operating temperature control PCB Solder temperature Insulation test voltage Mounting torque Mounting pressure on surface Creepage distance Max. peak power of bootstrap resistor IGBT and Diode Section Description Condition Symbol min Max. Blocking Voltage DC output current Repetitive peak collector current Short circuit withstand time
2 1
Value max 125 125 260 0.6 150 90
Unit
Tstg TPCB
Wave soldering, 1.6mm (0.063in.) from case for 10s
-40 2500 3.1
C C C V Nm N/mm mm W
Tsol
RMS, f=50Hz, t =1min VISOL M3 screw and washer MS Package flat on mounting surface NMC dS tp = 100s Tc= 100C PBRpeak
Value max 22 14 45 5 59 150 150
Unit
VCES Tc = 25C,TvJ <150C Tc = 80C,TvJ <150C Tp limited by TvJmax VDD=15V, VDC= 400V, TvJ = 150C Tc = 25C IGBT Diode Iu, Iv, Iw Iu, Iv, Iw tsc Ptot TvjI TvjD
600 -22 -14 -45 -40 -40
V A A s W C
Power dissipation per IGBT Operating junction temperature range
1 2
Monitored by pin 24 Allowed number of short circuits: <1000; time between short circuits: >1s. 8/18 Rev. 2.1, July 2009
Data Sheet
CIPOSTM IKCS22F60F2A IKCS22F60F2C
Description
Condition
Symbol min
Value typ max 2.1 2.7
Unit
Single IGBT thermal resistance, junction-case Single diode thermal resistance, junction-case
RthJC RthJCD
-
K/W
Control Section Description Condition Symbol Value min Module supply voltage High side floating supply voltage (VB vs. VS) High side floating IC supply offset voltage ITRIP input voltage /FLT-TEMP Input voltage /HIN, /LIN Input voltage /FLT-TEMP Input current Operating junction temperature Max. switching frequency
1
Unit max 20 20 600 10 20 5.5 5 125 20 mA C kHz V
VDD VBS tp < 500ns VS1,2,3 VIN,ITRIP VIN,FLT VIN = float VIN IIN,FLT TJ,IC fPWM
-1 -1 VDD-VBS-6 VDD-VBS-50 -1 -1 -
Recommended Operation Conditions
All voltages are absolute voltages referenced to VSS -Potential unless otherwise specified. Description Symbol Value min High side floating supply offset voltage High side floating supply voltage (VB vs. VS) Low side power supply Logic input voltages LIN, HIN, ITRIP VS VBS VDD VIN -3 12.5 12.5 0 max 500 17.5 17.5 5 V Unit
1
Monitored by pin 24 9/18 Rev. 2.1, July 2009
Data Sheet
CIPOSTM IKCS22F60F2A IKCS22F60F2C
Static Parameters
(Tc = 25C, VDD = 15V, if not stated otherwise) Description Condition Symbol min Collector-Emitter breakdown voltage Collector-Emitter saturation voltage VIN = 5V, IC = 0.25mA Iout = +/- 15A TvJ = 25C TvJ = 150C VIN = 5V, Iout = +/- 15A TvJ = 25C TvJ = 150C VCE = 600V, VIN = 5V TvJ = 25C TvJ = 150C tSC 5s VCC = 400V, TvJ = 150C V(BR)CES VCE(sat) 600 2
Value typ max
Unit
V V 1.65 1.9 1.7 1.6 95 2.1 0.9 460 75 12.1 10.4 1.7 10.4 10.6 300 2.4 55 220 75 30 56 2.1 V 2.05 A 40 1000 2.4 1.1 540 12.8 11.0 13.0 13.0 550 3.4 100 400 120 A V V mV mV V V V V V A mA A A A A
Diode forward voltage
VF
Zero gate voltage collector current of IGBT Short circuit collector current
1
ICES
IC(SC) VIH VIL
1.7 0.7 360 45 11.0 9.5 1.2 9.0 9.0 -
Logic "0" input voltage (LIN,HIN) Logic "1" input voltage (LIN,HIN) ITRIP positive going threshold ITRIP input hysteresis VDD and VBS supply undervoltage positive going threshold VDD and VBS supply undervoltage negative going threshold VCC and VBS supply undervoltage lockout hysteresis Input clamp voltage (/HIN, /LIN) Input clamp voltage (ITRIP) Quiescent VBx supply current (VBx only) Quiescent VDD supply current (VDD only) Input bias current Input bias current ITRIP Input bias current Leakage current of high side FAULT low on resistance of the pull down transistors IIN = 4mA IIN = 4mA VHIN = low VIN = float VIN = 5V VIN = 0V VITRIP = 5V Tj,IC = 125C VFLT = 0.5V, VITRIP = 1V
VIT,TH+ VIT,HYS VDDUV+ 2 VBSUV+ VDDUV2 VBSUVVDDUVH 2 VBSUVH VINCLAMP VINCLAMP2 IQB IQDD IIN+ IINIITRIP+ ILVS
2
Ron,FLT
1 2
Allowed number of short circuits: <1000; time between short circuits: >1s. Test is not subject of product test, verified by characterisation 10/18 Rev. 2.1, July 2009
Data Sheet
CIPOSTM IKCS22F60F2A IKCS22F60F2C
Dynamic Parameters
(Tc = 25C, VDD = 15V, if not stated otherwise) Description Condition Symbol min Turn-on propagation delay High side or low side Turn-on rise time High side or low side Turn-off propagation delay High side or low side Turn-off fall time High side or low side Shutdown propagation delay ITRIP Input filter time ITRIP Propagation delay ITRIP to FAULT Input filter time at LIN for turn on and off and input filter time at HIN for turn on only Input filter time at HIN for turn off Input filter time at HIN for turn off Fault clear time after ITRIP-fault Min. deadtime between low side and high side Deadtime of gate drive circuit IGBT Turn-on Energy (includes reverse recovery of diode) IGBT Turn-off Energy Iout = 15A, VDC = 300V TvJ = 25C TvJ = 150C Iout = 15A, VDC = 300V TvJ = 25C TvJ = 150C Iout = 15A, VDC = 300V TvJ = 25C TvJ = 150C VLIN,HIN = 0V; Iout = 15A, VDC = 300V VLIN,HIN = 5V, Iout = 15A, VDC = 300V VLIN,HIN = 5V; Iout = 15A, VDC = 300V VLIN,HIN = 0V, Iout = 15A, VDC = 300V VITRIP = 1V, Iu, Iv, Iw =15A VITRIP = 1V VITRIP = 1V VLIN,HIN = 0 V & 5V td(on) tr td(off) tf tITRIP tITRIPmin tFLT tFILIN 120 155 Value typ 718 61 937 74 1100 210 370 270 max 380 ns Unit
VHIN = 5V VHIN = 5 V VLIN,HIN = 0 V & 5V VITRIP = 0 V
tFILIN1 tFILIN2 tFLTCLR DTPWM DTIC Eon
-
220 400 4.7 1.5 380 0.69 0.93 0.27 0.37 0.07 0.17
ms s ns mJ
Eoff
Diode recovery Energy
Erec
Data Sheet
11/18
Rev. 2.1, July 2009
CIPOSTM IKCS22F60F2A IKCS22F60F2C
Integrated Components
Description Condition Symbol
1
Value min typ 10 100 4250 1.9 100 0.39 100 max 2.05 -
Unit
Resistor Resistor B-Constant of NTC (Negative Temperature Coefficient) Bootstrap diode forward voltage Capacitor Capacitor Bootstrap Capacitor TNTC = 25C TNTC = 25C IFDbs = 100mA
Rbs RTS B25 VFDbs C1 Cgex CbsHx
-
k K V nF
Typical Application
1
Symbols according to Figure 1 12/18 Rev. 2.1, July 2009
Data Sheet
CIPOSTM IKCS22F60F2A IKCS22F60F2C
Characteristics
(TC = 25C, VDD = 15V, if not stated otherwise)
40A 35A VGE=25C 125C
40A 35A
IC, COLLECTOR CURRENT
IF, forward CURRENT
30A 25A 20A 15A 10A 5A 0A 0V 1V
150C
30A 25A 20A 15A 10A 5A 0A VGE=25C 125C 150C
2V
3V
0V
1V
2V
VCE, COLLECTOR EMITTER VOLTAGE Figure 5. Typical IGBT output characteristic
VF FORWARD VOLTAGE Figure 6. Typical diode forward current as a function of forward voltage
1000ns
td(off) td(on)
1000ns
td(off)
td(on)
t, SWITCHING TIMES
100ns tf
t, SWITCHING TIMES
tr
100ns
tf
10ns
tr
0A
10A
20A
30A
40A
25C
50C
75C
100C
125C
IC, COLLECTOR CURRENT Figure 7. Typical switching times as a function of collector current (inductive load, TJ=150C, VCE = 300V Dynamic test circuit in Figure A)
TvJ, JUNCTION TEMPERATURE Figure 8. Typical switching times as a function of junction temperature (inductive load, VCE = 300V, IC = 15A Dynamic test circuit in Figure A)
Data Sheet
13/18
Rev. 2.1, July 2009
CIPOSTM IKCS22F60F2A IKCS22F60F2C
7.00mJ 6.00mJ Eon
0.90mJ 0.80mJ Eon
E, SWITCHING ENERGY
5.00mJ 4.00mJ 3.00mJ 2.00mJ Eoff 1.00mJ Erec 0.00mJ 0A 5A 10A 15A 20A 25A 30A 35A 40A
E, SWITCHING ENERGY
0.70mJ 0.60mJ 0.50mJ 0.40mJ 0.30mJ 0.20mJ 0.10mJ 0.00mJ 25C Erec Eoff
50C
75C
100C
125C
IC, COLLECTOR CURRENT Figure 9. Typical switching energy losses as a function of collector current (inductive load, TJ = 150C, VCE = 300V Dynamic test circuit in Figure A)
TvJ, JUNCTION TEMPERATURE Figure 10. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 300V, IC = 15A Dynamic test circuit in Figure A)
1000kOhm
ZthJC, TRANSIENT THERMAL RESISTANCE
10 K/W
0
Single Pulse IGBT Diode
RTS, NTC resistance
100kOhm
10 K/W
-1
10kOhm
1kOhm -25C 0C
min typ max
25C
50C
75C
100C
10 K/W 100ns 1s
-2
10s 100s 1ms 10ms 100ms
TNTC, NTC TEMPERATURE Figure 11. Characteristic of NTC as a function of NTC temperature
tP, PULSE WIDTH Figure 12. Transient thermal impedance as a function of pulse width (D=tP/T)
Data Sheet
14/18
Rev. 2.1, July 2009
CIPOSTM IKCS22F60F2A IKCS22F60F2C
Test Circuits and Parameter Definition
Erec = vD i F dt
0
t Erec
Figure A: Dynamic test circuit Leakage inductance L =180nH Stray capacitance C =39pF
Figure B: Definition of diodes switching characteristics
Figure C: Definition of ITIRP propagation delay
LIN1,2,3 HIN1,2,3
2.1V 0.9V td(off) tf td(on) tr 90% 10% tEoff
t Eoff
iCU, iCV, iCW vCEU, vCEV, vCEW
90%
10%
10% tEon
2%
2%
Eoff =
v
0
CEx
i Cx dt
Eon = vCEx i Cx dt
0
t Eon
Figure D: Switching times definition and switching energy definition
Data Sheet
15/18
Rev. 2.1, July 2009
CIPOSTM IKCS22F60F2A IKCS22F60F2C
tFILIN HIN LIN
tFILIN
LIN
on
off
on
off
high LO HO LO low
Figure E: Short Pulse suppression
Data Sheet
16/18
Rev. 2.1, July 2009
CIPOSTM IKCS22F60F2A IKCS22F60F2C
Package Outline IKCS22F60F2A
Note: There may occur discolourations on the copper surface without any effect of the thermal properties.
Data Sheet
17/18
Rev. 2.1, July 2009
CIPOSTM IKCS22F60F2A IKCS22F60F2C
Package Outline IKCS22F60F2C
Description
Condition
Symbol min
Value typ 17 max -
Unit
Weight
mP
-
g
Note: There may occur discolourations on the copper surface without any effect of the thermal properties. Data Sheet 18/18 Rev. 2.1, July 2009

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